 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor 2SB1567 DESCRIPTION *Collector-Emitter Breakdown Voltage: V(BR)CEO= -100V(Min) *High DC Current Gain: hFE= 1000(Min)@ (VCE= -2V, IC= -1A) *Complement to Type 2SD2398 APPLICATIONS *Designed for high power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous ww w -100 -100 scs .i UNIT V V -8 V -2 A -3 A 2 W .cn mi e ICM Collector Current-Peak Collector Power Dissipation @Ta=25 PC Collector Power Dissipation @TC=25 TJ Junction Temperature 20 150 Tstg Storage Temperature -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor ELECTRICAL CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SB1567 MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -5mA; IB= 0 B -100 V V(BR)CBO Collector-Base Breakdown Voltage IC= -50A; IE= 0 -100 V VCE(sat) Collector-Emitter Saturation Voltage IC= -1A; IB= -1mA B -1.5 V A ICBO Collector Cutoff Current VCB= -100V; IE= 0 -10 IEBO Emitter Cutoff Current VEB= -7V; IC= 0 -3.0 mA hFE DC Current Gain IC= -1A; VCE= -2V COB Collector Output Capacitance w w scs .i w IE= 0; VCB= -10V; f= 1MHz .cn mi e 1000 10000 35 pF isc Websitewww.iscsemi.cn 2 |
Price & Availability of 2SB1567
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |